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| High Voltage IGBT IXDA 20N120 AS VCES = 1200 V = 34 A IC25 VCE(sat) typ = 2.8 V Short Circuit SOA Capability Square RBSOA C TO-263 AB G E C (TAB) Preliminary Data G E E = Emitter, G = Gate , C (TAB) = Collector Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Weight Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 20 kW Continuous Transient TC = 25C TC = 90C TC = 90C, tp = 1 ms VGE = 15 V, TJ = 125C, RG = 68 W Clamped inductive load, L = 30 H VGE = 15 V, VCE = VCES, TJ = 125C RG = 68 W, non repetitive TC = 25C IGBT Maximum Ratings 1200 1200 20 30 34 21 42 ICM = 35 VCEK < VCES 10 200 -55 ... +150 -55 ... +150 2 V V V V A A A A s W Features q q q q q q q q NPT IGBT technology high switching speed low tail current no latch up short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled International standard package Advantages q q Space savings High power density Typical Applications C q C g q q q q AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4.5 0.8 6.5 V V V(BR)CES VGE(th) ICES IGES VCE(sat) VGE = 0 V IC = 0.6 mA, VCE = VGE VCE = VCES TJ = 25C TJ = 125C 0.8 mA mA 500 nA VCE = 0 V, VGE = 20 V IC = 20 A, VGE = 15 V 2.8 3.4 V (c) 2000 IXYS All rights reserved 1-4 021 IXDA 20N120 AS Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 20 A, VGE = 15 V, VCE = 0.5 VCES 150 70 70 60 Inductive load, TJ = 125C IC = 20 A, VGE = 15 V, VCE = 600 V, RG = 68 W 60 400 50 3.5 2.1 pF pF pF nC ns ns ns ns mJ mJ 0.63 K/W Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side TO-263 AB Cies Coes Cres Qg td(on) tr td(off) tf Eon Eoff RthJC 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74 .380 .405 .245 .320 .100 BSC .575 .090 .040 .050 0 .018 .625 .110 .055 .070 .008 .029 (c) 2000 IXYS All rights reserved 2-4 IXDA 20N120 AS 40 35 A IC TJ = 25C VGE=17V 15V 13V 11V 40 A 35 IC 30 25 20 15 9V TJ = 125C VGE=17V 15V 13V 30 25 20 15 10 5 0 0 1 2 VCE 11V 9V 10 5 0 3 V 4 0 1 2 3 VCE 4 V 5 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 40 35 A IC VCE = 20V TJ = 25C 40 A 35 IF 30 25 20 15 10 5 TJ = 125C TJ = 25C 30 25 20 15 10 5 0 5 6 7 8 9 10 VGE 11 V 0 1.0 1.5 2.0 2.5 VF 3.0 V Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 30 A IRM trr 20 V VCE = 600V IC = 25A 900 ns trr VGE 15 20 TJ = 125C VR = 600V IF = 20A 600 10 10 5 IRM 300 IXDH20N120AU1 0 0 10 20 30 40 50 60 70 QG 0 80 nC 0 100 200 0 300 A/ms 400 -di/dt Fig. 4 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode (c) 2000 IXYS All rights reserved 3-4 IXDA 20N120 AS 7 6 mJ Eon 140 ns 120 100 td(on) tr Eon 80 VCE = 600V VGE = 15V 60 RG = 68W TJ = 125C 40 5 mJ Eoff td(off) Eoff 500 ns 400 t 300 4 3 2 1 5 4 3 2 1 0 0 10 20 IC t VCE = 600V VGE = 15V 200 RG = 68W TJ = 125C 100 tf 0 40 20 A 0 40 0 0 10 20 IC 30 A 30 Fig. 5 Typ. turn on energy and switching times versus collector current 12 mJ Eon 240 td(on) tr 160 Eon ns t Eoff Fig. 6 Typ. turn off energy and switching times versus collector current 4 mJ VCE = 600V VGE = 15V IC = 20A TJ = 125C 8 VCE = 600V VGE = 15V IC = 20A TJ = 125C Eoff td(off) 1600 ns 1200 t 3 2 4 80 800 1 tf 400 0 0 50 100 150 200 250 RG 300 W 0 350 0 0 50 100 150 200 250 RG 300 W 350 0 Fig. 7 Typ. turn on energy and switching times versus gate resistor Fig. 8 Typ. turn off energy and switching times versus gate resistor 40 A 35 ICM 10 K/W 1 ZthJC RG = 68W TJ = 125C VCEK < VCES 30 25 20 15 10 5 0 0 200 400 600 800 1000 1200 V VCE 0.1 0.01 0.001 diode IGBT single pulse IXDH20N120AU1 0.0001 0.00001 0.0001 0.001 0.01 t 0.1 s 1 Fig. 9 Reverse biased safe operating area RBSOA Fig. 10 Typ. transient thermal impedance (c) 2000 IXYS All rights reserved 4-4 |
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